HT Semiconductor mmbt589 free download

File name mmbt589.pdf

MMBT58 9 TRANSISTOR(PNP) SOT-23 FEATURES High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE MARKING :589 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 310 mW RJA Thermal Resistance, junction to Ambient 403 /W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 A Collector-emitter cut-off current ICES VCES=-30V -0.1 A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 A hFE1 VCE=-2V,IC=-1mA 100 hFE2 VCE=-2V,IC=-500mA 100 300 DC current gain hFE3 VCE=-2V,IC=-1A 80 hFE4 VCE=-2V,IC=-2A 40 VCE(sat)1 IC= -500mA, IB=-50mA -0.25 V Collector-emitter saturation voltage VCE(sat)2 IC= -1A, IB=-100mA -0.3 V VCE(sat)3 IC= -2A, IB=-200mA